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Ordering number : ENA0632 2SK3702JS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3702JS Features * * * * * General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Pb-free type. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 18 72 2.0 20 150 --55 to +150 23 18 Unit V V A A W W C C mJ A Note : *1 VDD=20V, L=100H, IAV=18A *2 L100H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS= 16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=9A ID=9A, VGS=10V ID=9A, VGS=4V Ratings min 60 1 10 1.2 8 12 42 60 55 85 2.6 typ max Unit V A A V S m m Marking : K3702 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306QA TI IM TC-00000378 No. A0632-1/5 2SK3702JS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=18A VDS=30V, VGS=10V, ID=18A VDS=30V, VGS=10V, ID=18A IS=18A, VGS=0V Ratings min typ 775 125 105 11 65 75 70 19 2.5 4.1 0.98 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7525-002 10.0 3.5 4.5 2.8 3.2 16.0 3.6 7.2 1.6 1.2 14.0 0.75 123 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=9A RL=3.33 VDD=30V 2.4 Avalanche Resistance Test Circuit L 50 2SK3702JS 10V 0V 50 VDD D PW=10s D.C.1% VOUT G 2SK3702JS P.G 50 S No. A0632-2/5 2SK3702JS 40 ID -- VDS 10 V 6V --25 C Tc=25C 30 ID -- VGS VDS=10V 35 8V Drain Current, ID -- A Drain Current, ID -- A 20 25 4V 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 15 10 =7 0 0 1 2 --2 5 Tc 5 C VGS=3V 5 C 25 C 3 25 C 30 Tc= 4 25 75 C 5 6 IT06198 Drain-to-Source Voltage, VDS -- V 140 IT06197 140 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=9A Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 Static Drain-to-Source On-State Resistance, RDS(on) -- m 120 100 100 80 80 60 Tc= 75C 25C --25C 60 9A , I D= = 4V V GS =10V VGS 9A, I D= 40 40 20 0 2 3 4 5 6 7 8 9 10 IT06199 20 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 2.5 Case Temperature, Tc -- C 5 IT06200 VGS(off) -- Tc yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S VDS=10V ID=1mA Cutoff Voltage, VGS(off) -- V 2.0 3 2 1.5 10 7 5 3 2 Tc = C 25 5C --2 C 7 5 1.0 0.5 0 --50 1.0 --25 0 25 50 75 100 125 150 2 3 5 7 1.0 2 3 5 7 10 2 3 Case Temperature, Tc -- C 100 7 5 3 2 IT06201 1000 7 5 IS -- VSD VGS=0V Switching Time, SW Time -- ns Drain Current, ID -- A IT06202 SW Time -- ID VDD=30V VGS=10V Source Current, IS -- A 10 7 5 3 2 3 2 100 7 5 3 2 10 7 5 0.1 td(off) Tc= 75C 25C --25C 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3 tf tr td(on) 0.6 0.9 1.2 1.5 IT06203 2 3 5 7 1.0 2 3 5 7 10 2 3 Diode Forward Voltage, VSD -- V Drain Current, ID -- A 5 7 100 IT06204 No. A0632-3/5 2SK3702JS 3 2 Ciss, Coss, Crss -- VDS f=1MHz Gate-to-Source Voltage, VGS -- V 10 9 8 7 6 5 4 3 2 1 0 VGS -- Qg VDS=30V ID=18A Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss Coss 100 7 5 0 5 10 15 20 25 30 IT06205 Crss 0 5 10 15 20 IT06206 Drain-to-Source Voltage, VDS -- V 2 100 7 5 Total Gate Charge, Qg -- nC 2.5 ASO PD -- Ta Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 10 10 s Allowable Power Dissipation, PD -- W IDP=72A PW<10s 0 s 2.0 ID=18A 1m 10 DC op 10 s 0m tio ms 1.5 s Operation in this area is limited by RDS(on). era 1.0 n 0.5 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 7 100 IT06207 120 0 20 40 60 80 100 120 140 160 Drain-to-Source Voltage, VDS -- V 25 Ambient Tamperature, Ta -- C IT06208 PD -- Tc Avalanche Energy derating factor -- % EAS -- Ta Allowable Power Dissipation, PD -- W 20 100 80 15 60 10 40 5 20 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 175 IT10478 Case Temperature, Tc -- C IT06209 Ambient Temperature, Ta -- C No. A0632-4/5 2SK3702JS Note on usage : Since the 2SK3702JS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0632-5/5 |
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